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SPP80P06P G SPB80P06P G SIPMOS (R) Power-Transistor
Features
Product Summary
* P-Channel * P-Channel Drain source voltage * Enhancement mode mode * Enhancement Drain-source on-state resistance * Avalanche rated * Avalanche rated Continuous drain current * dv/dt rated * * 175Cdv/dt ratedtemperature operating * 175C operating temperature * Pb-free lead plating; RoHs compliant * Qualified according to AEC Q101
VDS RDS(on) ID
-60 0.023 -80
V
W
A
Type SPP80P06P G SPB80P06P G
Package PG-TO263-3
Lead free Yes
Pin 1
G
PIN 2/4
D
PIN 3
S
PG-TO220-3 Yes
Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Continuous drain current
Value -80 -64
Unit A
ID
T C = 25 C, 1) T C = 100 C
Pulsed drain current
ID puls EAS EAR
dv/dt
-320 823 34 6 kV/s mJ
T C = 25 C
Avalanche energy, single pulse
I D = -80 A , V DD = -25 V, RGS = 25 W Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt
I S = -80 A, V DS = -48 , di/dt = 200 A/s, T jmax = 175 C
Gate source voltage Power dissipation
VGS Ptot Tj , Tstg
20 340 -55...+175 55/175/56
V W C
T C = 25 C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
1Current limited by bondwire; with an RthJC = 0.4 K/W the chip is able to carry I = -91A D
Rev 1.4
Page 1
2009-11-19
SPP80P06P G SPB80P06P G
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. Values typ. max. 0.4 62 62 40 K/W Unit
RthJC RthJA RthJA
-
Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min. Values typ. -3 max. -4 A -0.1 -10 -10 0.021 -1 -100 -100 0.023 nA V Unit
V(BR)DSS VGS(th) IDSS
-60 -2.1
VGS = 0 V, I D = -250 A
Gate threshold voltage, VGS = VDS I D = -5.5 mA Zero gate voltage drain current
VDS = -60 V, V GS = 0 V, T j = 25 C VDS = -60 V, V GS = 0 V, T j = 150 C
Gate-source leakage current
IGSS RDS(on)
-
VGS = -20 V, VDS = 0 V
Drain-source on-state resistance
W
VGS = -10 V, I D = -64 A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Rev 1.4 Page 2
2009-11-19
SPP80P06P G SPB80P06P G
Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol min.
Dynamic Characteristics Transconductance Input capacitance
Values typ. max.
Unit
VDS2*I D*RDS(on)max , ID = -64 A VGS = 0 V, V DS = -25 V, f = 1 MHz
Output capacitance
gfs Ciss Coss Crss t d(on)
18 -
36 4026 1252 437 24
5033 1565 546 36
S pF
VGS = 0 V, V DS = -25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, V DS = -25 V, f = 1 MHz
Turn-on delay time ns
VDD = -30 V, V GS = -10 V, ID = -64 A, RG = 1 W
Rise time
tr
-
18
27
VDD = -30 V, V GS = -10 V, ID = -64 A, RG = 1 W
Turn-off delay time
t d(off)
-
56
84
VDD = -30 V, V GS = -10 V, ID = -64 A, RG = 1 W
Fall time
tf
-
30
45
VDD = -30 V, V GS = -10 V, ID = -64 A, RG = 1 W
Rev 1.4
Page 3
2009-11-19
SPP80P06P G SPB80P06P G
Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol min.
Dynamic Characteristics Gate to source charge
Values typ. max.
Unit
Q gs Q gd Qg V(plateau)
-
27.4 50 115 -6.2
41 75 173 -
nC
VDD = -48 V, ID = -80 A
Gate to drain charge
VDD = -48 V, ID = -80 A
Gate charge total
VDD = -48 V, ID = -80 A, V GS = 0 to -10 V
Gate plateau voltage V
VDD = -48 V , I D = -80 A
Parameter Reverse Diode Inverse diode continuous forward current
Symbol min.
Values typ. -1.2 117 420 max. -80 -320 -1.6 175 630
Unit
IS ISM VSD trr Qrr
-
A
T C = 25 C
Inverse diode direct current,pulsed
T C = 25 C
Inverse diode forward voltage V ns nC
VGS = 0 V, I F = -80 A
Reverse recovery time
VR = -30 V, IF=I S , di F/dt = 100 A/s
Reverse recovery charge
VR = -30 V, IF=l S , diF/dt = 100 A/s
Rev 1.4
Page 4
2009-11-19
SPP80P06P G SPB80P06P G
Power dissipation Drain current parameter: VGS 10 V
SPP80P06P
Ptot = f (TC)
SPP80P06P
ID = f (TC )
-90
360
W
280 240
A
-70 -60
Ptot
ID
200 160 120 80 40 0 0 -50 -40 -30 -20 -10 0 0 20 40 60 80 100 120 140 160C 190
20
40
60
80
100 120 140 160C 190
TC
TC
Safe operating area
Transient thermal impedance
I D = f ( VDS )
parameter : D = 0 , T C = 25 C
-10
3
ZthJC = f (tp )
parameter : D = tp /T
10 1
SPP80P06P
SPP80P06P
K/W A
tp = 14.0s
10 0
-10 2
Z thJC
100 s
10 -1
ID
V
DS
/I
D
=
1 ms
10 -2 D = 0.50 0.20 10
-3
DS (
on )
-10
1
R
10 ms
0.10 0.05
DC 10 -4
single pulse
0.02 0.01
-10 0 -1 -10
-10
0
-10
1
V
-10
2
10 -5 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
VDS
Rev 1.4 Page 5
tp
2009-11-19
SPP80P06P G SPB80P06P G
Typ. output characteristic Typ. drain-source-on-resistance
I D = f (VDS); T j=25C parameter: tp = 80 s
SPP80P06P
RDS(on) = f (ID )
parameter: VGS
SPP80P06P
-190
Ptot = 340.00W
k j
VGS [V] a
b
0.075
A
-160 -140
-4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 -8.0 -9.0 -10.0
W
b
c
d
e
f
g
h
i
0.060
i
c d
RDS(on)
0.055 0.050 0.045 0.040 0.035 0.030 0.025 0.020
ID
-120 -100 -80 -60 -40 -20 0 0
c
e
h
f g
g
h i
fj
k
e d
0.015 0.010 VGS [V] =
b c d e f -4.5 -5.0 -5.5 -6.0 -6.5 g h i j k -7.0 -7.5 -8.0 -9.0 -10.0
b a
0.005 -8
jk
-1
-2
-3
-4
-5
-6
-7
V
-10
0.000 0
-20
-40
-60
-80
-100 -120
A
-160
VDS
ID
Typ. transfer characteristics I D= f ( V GS )
VDS 2 x I D x RDS(on)max
parameter: tp = 80 s
-80
Typ. forward transconductance
gfs = f(ID); Tj=25C
parameter: gfs
50
A
S
40
-60 35 -50
gfs
-1 -2 -3 -4 -5 -6 -7 -8
ID
30 25 20 15
-40
-30
-20 10 -10 5 0 0
0 0
V -10 VGS
-10 -20 -30 -40 -50 -60 -70 -80
A -100 ID
Rev 1.4
Page 6
2009-11-19
SPP80P06P G SPB80P06P G
Drain-source on-state resistance Gate threshold voltage
RDS(on) = f (Tj)
parameter : I D = -64 A, VGS = -10 V
SPP80P06P
VGS(th) = f (Tj)
parameter: VGS = VDS , ID = -5.5 mA
-5.0
0.070
W
V
98%
-4.0
0.060 0.055
RDS(on)
0.050 0.045 0.040 0.035 0.030 0.025 0.020 0.015 0.010 0.005 0.000 -60 -20 20 60 100 140 C 200
V GS(th)
-3.5
typ
-3.0 -2.5
98% typ
2%
-2.0 -1.5 -1.0 -0.5 0.0 -60
-20
20
60
100
140
Tj
C 200 Tj
Typ. capacitances
Forward characteristics of reverse diode
C = f (VDS)
parameter: VGS=0V, f=1 MHz
10
5
IF = f (VSD )
parameter: Tj , tp = 80 s
10 3
SPP80P06P
pF
A
10 4
10 2
C
Ciss
Coss
10 3 10 1
IF
Crss
Tj = 25 C typ Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%)
10 2 0
-5
-10
-15
V
-25
10 0 0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4 V
-3.0
VDS
VSD
Page 7
Rev 1.4
2009-11-19
SPP80P06P G SPB80P06P G
Avalanche energy Typ. gate charge
EAS = f (Tj)
850
para.: I D = -80 A , VDD = -25 V, RGS = 25 W
mJ
VGS = f (QGate )
parameter: ID = -80 A pulsed
SPP80P06P
-16
V
700 -12 600
E AS
VGS
-10
500
0,2 VDS max
0,8 VDS max
400
-8
300 200
-6
-4
100
-2
0 25
45
65
85
105
125
145
C 185 Tj
0 0
20
40
60
80
100 120 140 nC
180
QGate
Drain-source breakdown voltage
V(BR)DSS = f (Tj)
SPP80P06P
-72
V
-68 -66 -64 -62 -60 -58 -56 -54 -60
V(BR)DSS
-20
20
60
100
140 C
200
Tj
Rev 1.4 Page 8
2009-11-19
SPP80P06P G SPB80P06P G
PG-TO220-3
Rev 1.4
Page 9
2009-11-19
SPP80P06P G SPB80P06P G
PG-TO263-3
Rev 1.4
Page 10
2009-11-19
SPP80P06P G SPB80P06P G
Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev 1.4
Page 11
2009-11-19

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